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@inproceedings{sonderskov2016epe,
  author = {Simon Dyhr S{\o}nderskov and Asger Bj{\o}rn J{\o}rgensen and Anders Eggert Maarbjerg and Kristian Linding Frederiksen and Stig Munk-Nielsen and Szymon B\c{e}czkowski and Christian Uhrenfeldt},
  title = {{Test Bench for Thermal Cycling of 10 kV Silicon Carbide Power Modules}},
  booktitle = {Proceedings of 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe)},
  year = 2016,
  month = {Sept.},
  doi = {10.1109/EPE.2016.7695328},
}

@inproceedings{abj2016epe, 
  author={Asger Bj{\o}rn J{\o}rgensen and Simon Dyhr S{\o}nderskov and Nicklas Christensen and Kristian Linding Frederiksen and Eddy Iciragiye and Anders Eggert Maarbjerg and Stig Munk-Nielsen and Bj{\o}rn Rannestad}, 
  booktitle={2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe)}, 
  title={Novel screening techniques for wind turbine power converters}, 
  year=2016, 
  pages={1-8}, 
  doi={10.1109/EPE.2016.7695302}, 
  month={Sep.},
}

@inproceedings{christensen2017epe, 
  author={Nicklas Christensen and Asger B{\o} J{\o}rgensen and Dipen Narendra Dalal and Simon Dyhr S{\o}nderskov and Szymon B\c{e}czkowski and Christian Uhrenfeldt and Stig Munk-Nielsen}, 
  booktitle={2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)}, 
  title={{Common Mode Current Mitigation for Medium Voltage Half Bridge SiC Modules}}, 
  year={2017}, 
  pages={1-8}, 
  doi={10.23919/EPE17ECCEEurope.2017.8099202}, 
  month={Sep.},
}

@inproceedings{dalal2017epe, 
  author={Dipen Narendra Dalal and Nicklas Christensen and Asger B{\o} J{\o}rgensen and Simon Dyhr S{\o}nderskov and Szymon B\c{e}czkowski and Christian Uhrenfeldt and Stig Munk-Nielsen}, 
  booktitle={2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)}, 
  title={{Gate Driver with High Common Mode Rejection and Self Turn-on Mitigation for a 10 kV SiC MOSFET Enabled MV converter}}, 
  year={2017}, 
  pages={1-10}, 
  doi={10.23919/EPE17ECCEEurope.2017.8099274}, 
  month={Sep.},
}

@inproceedings{unni2017epe, 
  author={Unnikrishnan Raveendran Nair and Stig Munk-Nielsen and Asger Bj{\o}rn J{\o}rgensen}, 
  booktitle={2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)}, 
  title={{Performance Analysis of Commercial MOSFET Packages in Class E Converter Operating at 2.56 MHz}}, 
  year={2017}, 
  pages={1-9}, 
  doi={10.23919/EPE17ECCEEurope.2017.8099082}, 
  month={Sep.},
}

@inproceedings{abj2017epe, 
  author={Asger B{\o} J{\o}rgensen and Nicklas Christensen and Dipen Narendra Dalal and Simon Dyhr S{\o}nderskov and Szymon B\c{e}czkowski and Christian Uhrenfeldt and Stig Munk-Nielsen}, 
  booktitle={2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)}, 
  title={{Reduction of Parasitic Capacitance in 10 kV SiC MOSFET Power Modules using 3D FEM}}, 
  year=2017, 
  pages={1-8}, 
  doi={10.23919/EPE17ECCEEurope.2017.8098962}, 
  month={Sept.},
}

@inproceedings{sbe2017epe, 
  author={Szymon B\c{e}czkowski and Asger B{\o} J{\o}rgensen and Helong Li and Christian Uhrenfeldt and Xiaoping Dai and Stig Munk-Nielsen}, 
  booktitle={2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)}, 
  title={{Switching Current Imbalance Mitigation in Power Modules with Parallel Connected SiC MOSFETs}}, 
  year={2017}, 
  pages={1-8}, 
  doi={10.23919/EPE17ECCEEurope.2017.8099245}, 
  month={Sep.},
  url={https://vbn.aau.dk/files/305861887/EPE17_current_imbalance_mitigation_sicmosfet.pdf},
}

@InProceedings{abj2018cips,
  author    = {Asger B{\o}rn J{\o}rgensen and Unnikrishnan Raveendran Nair and Stig Munk-Nielsen and Christian Uhrenfeldt},
  booktitle = {CIPS 2018; 10th International Conference on Integrated Power Electronics Systems},
  title     = {{A SiC MOSFET Power Module With Integrated Gate Drive for 2.5 MHz Class E Resonant Converters}},
  year      = {2018},
  month     = {March},
  pages     = {1-6},
  url       = {https://vbn.aau.dk/files/305860583/cips18_integratedsicmodule.pdf},
}

@article{abj2019fastintegratedgan,
  author   = {Asger Bj{\o}rn J{\o}rgensen and Szymon B\c{e}czkowski and Christian Uhrenfeldt and Niels H{\o}gholt Petersen and S{\o}ren J{\o}rgensen and Stig Munk-Nielsen},
  title    = {{A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices}},
  journal  = {IEEE Transactions on Power Electronics},
  year     = 2019,
  volume   = 34,
  number   = 3,
  pages    = {2494-2504},
  month    = {March},
  issn     = {0885-8993},
  doi      = {10.1109/TPEL.2018.2845538},
  url      = {https://vbn.aau.dk/files/305860383/ieee19tpel_fastswitchingganpowermodule.pdf},
}

@TechReport{abj2019sepic,
  author      = {Asger Bj{\o}rn J{\o}rgensen},
  institution = {TechRxiv},
  title       = {Derivation, Design and Simulation of the Single-Ended Primary-Inductor Converter (SEPIC)},
  year        = {2019},
  month       = {May},
  doi         = {10.31224/osf.io/69puh},
  url         = {https://vbn.aau.dk/files/302791680/abj_sepic_engrxiv.pdf},
}

@InProceedings{abj2019epe,
  author    = {Asger Bj{\o}rn J{\o}rgensen and Tzu-Hsuan Cheng and Douglas Hopkins and Szymon Michal Beczkowski and Christian Uhrenfeldt and Stig Munk-Nielsen},
  booktitle = {Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)},
  title     = {Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module},
  year      = {2019},
  month     = sep,
  doi       = {10.23919/EPE.2019.8915012},
}

@PhdThesis{abj2019phdthesis,
  author = {Asger Bj{\o}rn J{\o}rgensen},
  school = {Ph.d.-serien for Det Ingeni{\o}r- og Naturvidenskabelige Fakultet, Aalborg Universite},
  title  = {Packaging of Wide Bandgap Power Semiconductors using Simulation-based Design},
  year   = {2019},
  note   = {PhD supervisor: Prof. Stig Munk-Nielsen, Aalborg University Assistant PhD supervisor: Assoc. Prof. Christian Uhrenfeldt, Aalborg University Assoc. Prof. Szymon Beczkowski, Aalborg University},
}

@InProceedings{jkj2019epe,
  author    = {Jannick Kj{\ae}r J{\o}rgensen and Nicklas Christensen and Dipen Narendra Dalal and Asger Bj{\o}rn J{\o}rgensen and Hongbo Zhao and Stig Munk-Nielsen and Christian Uhrenfeldt},
  booktitle = {Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE)},
  title     = {Loss Prediction of Medium Voltage Power Modules: Trade-offs between Accuracy and Complexity},
  year      = {2019},
  month     = sep,
  pages     = {4102--4108},
  publisher = {IEEE Press},
  series    = {IEEE Energy Conversion Congress and Exposition},
  doi       = {10.1109/ECCE.2019.8913066},
}

@Article{hongbo2020physicsbasedmodeling,
  author    = {Hongbo Zhao and Dipen Narendra Dalal and Asger Bj{\o}rn J{\o}rgensen and Jannick Kj{\ae}r J{\o}rgensen and Xiongfei Wang and Szymon Michal Beczkowski and Stig Munk-Nielsen and Christian Uhrenfeldt},
  journal   = {IEEE Transactions on Power Electronics},
  title     = {Physics-Based Modeling of Parasitic Capacitance in Medium-Voltage Filter Inductors},
  year      = {2021},
  issn      = {0885-8993},
  month     = jun,
  number    = {1},
  pages     = {829--843},
  volume    = {36},
  abstract  = {This article proposes a general physics-based model for identifying the parasitic capacitance in medium-voltage (MV) filter inductors, which can provide analytical calculations without using empirical equations and is not restricted by the geometrical structures of inductors. The elementary capacitances of the MV inductor are identified, then the equivalent capacitances between the two terminals of the inductor are derived under different voltage potential on the core. Further, a three-terminal equivalent circuit, instead of the conventional two-terminal equivalent circuit, is proposed by using the derived capacitances. Thus, the parasitic equivalent capacitance between the terminals and the core are explicitly quantified. Experimental measurements for parasitic capacitances show a good agreement with the theoretical calculations.},
  day       = {17},
  doi       = {10.1109/TPEL.2020.3003157},
  keywords  = {Filter inductors, medium-voltage (MV), parasitic capacitance, physics-based modeling, three-terminal equivalent circuit},
  language  = {English},
  publisher = {IEEE},
}

@Article{2020abjoverviewdigitaldesign,
  author    = {Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen and Christian Uhrenfeldt},
  journal   = {IEEE Transactions on Power Electronics},
  title     = {Overview of Digital Design and Finite-Element Analysis in Modern Power Electronic Packaging},
  year      = {2020},
  issn      = {0885-8993},
  month     = oct,
  number    = {10},
  pages     = {10892--10905},
  volume    = {35},
  abstract  = {Wide band gap (WBG) semiconductors require packaging with reduced parasitic inductance and capacitance. To achieve this, new packaging solutions are proposed that increase integration. This causes difficulty in measurement of voltages, currents, and device temperature, and therefore, designers must rely more heavily on simulations to gain insight in the operation of the developed prototypes. Additionally, the use of the digital design may reduce the number of physical prototype iterations, and thereby, reduces the development time. Gaining fidelity of three-dimensional multiphysics simulations, reduced order modeling, and system simulation aids in the design of working prototypes and pushes performance of new power modules based on WBG semiconductor devices. This article provides an overview and discusses the recent advances in the use of finite-element analysis and simulation tools within the topic of power module packaging. The main aspects covered are extraction of electrical parasitics, simulation of transient thermal response, and issues related to evaluation of electric fields. An example of a simulation software roadmap is presented that enables accurate electro-thermal simulation of new packaging structures that combine the conventional power module technology with integrated printed circuit boards. The future challenges for utilizing the potential of the digital design are discussed.},
  doi       = {10.1109/TPEL.2020.2978584},
  keywords  = {Circuit simulation, Design Methodology, Finite-Element Methods, Semiconductor device packaging},
  language  = {English},
  publisher = {IEEE},
}

@Article{2020dalalimpactofparasiticcapacitance,
  author    = {Dipen Narendra Dalal and Nicklas Christensen and Asger Bj{\o}rn J{\o}rgensen and Jannick Kj{\ae}r J{\o}rgensen and Szymon Michal Beczkowski and Stig Munk-Nielsen and Christian Uhrenfeldt},
  journal   = {IEEE Journal of Emerging and Selected Topics in Power Electronics},
  title     = {Impact of Power Module Parasitic Capacitances on Medium Voltage SiC MOSFETs Switching Transients},
  year      = {2020},
  issn      = {2168-6777},
  month     = mar,
  number    = {1},
  pages     = {298 -- 310},
  volume    = {8},
  abstract  = {Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant magnitude of the displacement currents through power module parasitic capacitances that are inherent in packaging design. This is of increasing concern, particularly in case of newly emerging medium-voltage (MV) SiC MOSFETs since the magnitude of the displacement currents can be several order higher due to the fast switching transients and increased voltage magnitudes of the SiC MOSFETs compared to their Si counter parts. The severity intensifies when the magnitude of the displacement current becomes comparable to a significant fraction of SiC MOSFETs rated current, leading to the worsened impact on the converter electromagnetic interference (EMI) as well as performance in terms of switching losses. The key objective of this article is to provide a detail insight into the impact of the module parasitic capacitances on the SiC MOSFET switching dynamics and losses. To realize this, a well-defined approach to dissect the switching energy dissipation is proposed, based on which the detailed analysis and quantitative measurements of the module parasitic capacitance impact on terms of added switching energy losses, and common-mode currents are investigated using a custom-packaged 10-kV half-bridge SiC MOSFET power modules. The theoretical analysis and experimental results obtained from dynamic as well as static characterization reveal that the impact of the module parasitic capacitance on the switching energy dissipation is twofold and substantially adverse such that it cannot be overlooked considering its intended application in the high-power MV power electronic converters.},
  doi       = {10.1109/JESTPE.2019.2939644},
  keywords  = {Silicon Carbide, 10 kV SiC MOSFETs, Parasitic capacitance ,, Switching losses, EMI/EMC, 10-kV SiC MOSFETs, electromagnetic interference (EMI)/electromagnetic compatibility (EMC), silicon carbide, parasitic capacitance, switching losses},
  language  = {English},
  publisher = {IEEE},
}

@Article{2020abjhighfrequency,
  author   = {Asger Bj{\o}rn J{\o}rgensen and Thore Stig Aunsborg and Szymon Michal Beczkowski and Christian Uhrenfeldt and Stig Munk-Nielsen},
  journal  = {IET Power Electronics},
  title    = {High-frequency resonant operation of an integrated medium-voltage SiC MOSFET power module},
  year     = {2020},
  issn     = {1755-4535},
  month    = feb,
  number   = {3},
  pages    = {475--482},
  volume   = {13},
  abstract = {Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium-voltage silicon carbide (SiC) semiconductor power devices have a potential to replace vacuum tubes and allow for more efficient and compact converters in the high-frequency range. High-voltage packages have been proposed in the literature that are suitable for the 10 kV SiC metal-oxide-semiconductor field-effect transistors (MOSFETS), and its fast voltage switching capabilities in hard-switched applications have been demonstrated. However, no packaging is presented which allows the high-frequency operation of a 10 kV SiC MOSFET die. This study proposes the design of a power module for MHz resonant operation of a 10 kV SiC MOSFET. At high switching frequencies, the gate losses become substantial, thus the gate driver is included inside the power module package to ensure a low inductive and high thermally conductive design as seen from the gate driver. The inductance of the proposed power module layout structure is evaluated using ANSYS Q3D Extractor. The thermal performance of the integrated gate-driver circuitry is experimentally verified. Finally, the resonant operation of a medium-voltage SiC MOSFET power module is demonstrated experimentally at 1 MHz.},
  doi      = {10.1049/iet-pel.2019.0413},
}

@InProceedings{2020dipendemonstration10kv,
  author    = {Dipen Narendra Dalal and Hongbo Zhao and Jannick Kj{\ae}r J{\o}rgensen and Nicklas Christensen and Asger Bj{\o}rn J{\o}rgensen and Szymon Michal Beczkowski and Christian Uhrenfeldt and Stig Munk-Nielsen},
  booktitle = {2020 IEEE Applied Power Electronics Conference and Exposition (APEC)},
  title     = {Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack},
  year      = {2020},
  month     = jun,
  note      = {2020 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 15-03-2020 Through 19-03-2020},
  pages     = {2751--2757},
  publisher = {IEEE Press},
  series    = {IEEE Applied Power Electronics Conference and Exposition (APEC)},
  abstract  = {This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.},
  doi       = {10.1109/APEC39645.2020.9124441},
  isbn      = {978-1-7281-4830-4},
  keywords  = {10 kV SiC MOSFETs, medium voltage (MV), power stack, two-level voltage source converter (2L-VSC)},
  language  = {English},
}

@InProceedings{2020faheempncell,
  author    = {Faheem Ahmad and Asger Bj{\o}rn J{\o}rgensen and Szymon Michal Beczkowski and Stig Munk-Nielsen},
  booktitle = {2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)},
  title     = {Daisy Chain PN Cell for Multilevel Converter using GaN for High Power Density},
  year      = {2020},
  month     = oct,
  note      = {EPE'20 ECCE Europe: 22nd European Conference on Power Electronics and Applications ; Conference date: 07-09-2020 Through 11-09-2020},
  publisher = {IEEE Press},
  abstract  = {Power semiconductor devices are achieving high switching speed and high breakdown voltage. This improves inverter performance. But, as inverter improves, further challenge of dv/dt noise is generated that needs to be tackled by filter stage. Multilevel inverters can solve this challenge. But there are implementation complexity associated with multilevel topologies like requirement of multiple isolated DC source, complicated charging algorithm, dedicated sensing hardware. This paper presents a switch capacitor type converter topology enabling a DC-AC three level output. Joining multiple iterations of topology in daisy-chained configuration, the converter can achieve voltage gain with multilevel waveform. Requirement of a single DC supply, with inherent charge balancing capability on capacitor, the topology is well suited for low voltage renewable sources like photovoltaic (PV) or fuel cell. The paper presents design of high frequency commutation loop. Utilizing finite element analysis (FEA) tool ANSYS Electronics Desktop (Q3D) to extract PCB parasitics helps in eliminating prototyping cost and time. Designed inverter is then subjected to continuous load test where it shows improving performance with increasing inductive load.},
  doi       = {10.23919/EPE20ECCEEurope43536.2020.9215648},
  isbn      = {978-1-7281-9807-1},
  keywords  = {Capacitors, Topology, Switches, Modulation, Inverters, Gallium nitride (GaN), Europe, Multilevel converters, Gallium Nitride (GaN), Modulation strategy, High power density systems},
  language  = {English},
}

@InProceedings{2020hongbozhaogroundcurrentfilters,
  author    = {Hongbo Zhao and Dipen Narendra Dalal and Jannick Kj{\ae}r J{\o}rgensen and Xiongfei Wang and Michael M{\o}ller Bech, Asger Bj{\o}rn J{\o}rgensen and Szymon Michal Beczkowski and Christian Uhrenfeldt and Stig Munk-Nielsen},
  booktitle = {Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)},
  title     = {Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters},
  year      = {2020},
  month     = jun,
  note      = {2020 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 15-03-2020 Through 19-03-2020},
  pages     = {1972--1978},
  publisher = {IEEE Press},
  series    = {IEEE Applied Power Electronics Conference and Exposition (APEC)},
  abstract  = {This paper analyzes the phenomenon of ground current in the filter inductors (with a grounded core/frame) of medium-voltage (MV) SiC-MOSFET-based. The inductor ground current is generated during the switching transients, due to the capacitive coupling between the winding and the core/frame. A general three-terminal equivalent circuit is proposed for representing the capacitive couplings of the filter inductors, which allows the extraction of equivalent admittances between the terminals by using the system identification tool, and thus the ground current can be accurately simulated in the frequency range of concern (up to 100 MHz in this paper). The simulated ground current based on the behavioral model match closely with the experimental results measured in a medium voltage SiC MOSFET based double-pulse test.},
  doi       = {10.1109/APEC39645.2020.9124147},
  keywords  = {Ground current, filter inductors, general three-terminal equivalent circuit, behavioral modeling, Double-pulse test},
  language  = {English},
}

@Article{iet2020abjcascadedmosfet,
  author    = {Asger Bj{\o}rn J{\o}rgensen and Simon Heindorf S{\o}nderskov and Szymon Michal Beczkowski and Benoit Bidoggia and Stig Munk-Nielsen},
  journal   = {IET Power Electronics},
  title     = {Analysis of cascaded silicon carbide MOSFETs using a single gate driver for medium voltage applications},
  year      = {2020},
  issn      = {1755-4535},
  month     = feb,
  number    = {3},
  pages     = {413--419},
  volume    = {13},
  abstract  = {Medium voltage power supplies for applications such as electrostatic precipitators are used in industrial plants to remove particles from fumes. Current solutions based on silicon devices rely on high-voltage transformers to reach the required output voltage levels. New wide band gap materials such as silicon carbide have higher electric breakdown voltage, and thus fewer devices are required in series to withstand the output voltage. Owing to the faster switching speed of silicon carbide devices further demands are put on the serialisation method. In this study, a cascaded series-connection method using only a single external gate signal is analysed in detail, guidelines to size the resistor–capacitor–diode-snubber are proposed and its applicability is experimentally demonstrated. The circuit is tested with four series-connected devices in a double pulse test at 2400 V and current levels of 250–800 mA to show the load dependence. The serialisation technique is tested in a boost converter operating in discontinuous conduction mode but is limited to 1200 V due to an oscillating state occurring after zero current crossing. Finally, the technique is tested at 2400 V and 10 kHz in a synchronous boost converter, which demonstrates the proposed design guidelines},
  day       = {19},
  doi       = {10.1049/iet-pel.2019.0573},
  language  = {English},
  publisher = {Institution of Engineering and Technology},
}

@InProceedings{zhao2020couplingdpt,
  author    = {Hongbo Zhao and Dipen Narendra Dalal and Jannick Kj{\ae}r J{\o}rgensen and Asger Bj{\o}rn J{\o}rgensen and Xiongfei Wang and Bj{\o}rn Rannestad and Stig Munk-Nielsen},
  booktitle = {2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL)},
  title     = {Identification of the Terminal-to-Core Couplings in Filter Inductors by Using Double-Pulse-Test Setup},
  year      = {2020},
  month     = nov,
  pages     = {1-6},
  publisher = {IEEE},
}

@Article{abj2021stressstrainlaser,
  author  = {Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen and Christian Uhrenfeldt},
  journal = {IEEE Transactions on Power Electronics},
  title   = {Evaluation of In Situ Thermomechanical Stress-Strain in Power Modules using Laser Displacement Sensors},
  year    = {2021},
  month   = aug,
  number  = {8},
  pages   = {9411 - 9418},
  volume  = {36},
}

@Article{hongbo2021copperfoilinductors,
  author  = {Hongbo Zhao and Zhizhao Huang and Dipen Narendra Dalal and Jannick Kj{\ae}r J{\o}rgensen and Asger Bj{\o}rn J{\o}rgensen and Xiongfei Wang and Stig Munk-Nielsen},
  journal = {IEEE Transactions on Power Electronics},
  title   = {Parasitic Capacitance Modeling of Copper-Foiled Medium-Voltage Filter Inductors Considering Fringe Electrical Field},
  year    = {2021},
  month   = jul,
  number  = {7},
  pages   = {8181 - 8192},
  volume  = {36},
}

@TechReport{abj2021zeta,
  author       = {Asger Bj{\o}rn J{\o}rgensen},
  institution  = {TechRxiv},
  title        = {Derivation, Design and Simulation of the Zeta converter},
  year         = {2021},
  month        = oct,
  howpublished = {TechRxiv},
}

@Article{rui2022selfpowergatedriver,
  author    = {Rui Wang and Asger Bj{\o}rn J{\o}rgensen and Dalal Dipen Narendra and Shaokang Luan and Hongbo Zhao and Stig Munk-Nielsen},
  journal   = {IEEE Journal of Emerging and Selected Topics in Power Electronics},
  title     = {Integrating 10-kV SiC MOSFET Into Battery Energy Storage System With a Scalable Converter-Based Self-Powered Gate Driver},
  year      = {2023},
  month     = feb,
  number    = {1},
  pages     = {351--360},
  volume    = {11},
  doi       = {10.1109/JESTPE.2022.3142298},
  language  = {English},
  publisher = {IEEE},
}

@Article{rui2022singlegatedriverstack,
  author  = {Rui Wang and Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen},
  journal = {IET Power Electronics},
  title   = {An enhanced single gate driven voltage-balanced SiC MOSFET stack topology suitable for high-voltage low-power applications},
  year    = {2022},
  number  = {3},
  pages   = {251-262},
  volume  = {15},
}

@Article{hongbo2022withoutfloatingcore,
  author  = {Hongbo Zhao and Zhan Shen and Dipen Narendra Dalal and Asger Bj{\o}rn J{\o}rgensen and Xiongfei Wang and Stig Munk-Nielsen and Christian Uhrenfeldt},
  journal = {IEEE Transactions on Industrial Electronics},
  title   = {Parasitic Capacitance Modeling of Inductors Without Using the Floating Voltage Potential of Core},
  year    = {2022},
  month   = mar,
  number  = {3},
  pages   = {3214 - 3222},
  volume  = {69},
}

@InProceedings{Faheem2022ganheatspreader,
  author    = {Faheem Ahmad and Thore Stig Aunsborg and Szymon Beczkowski and Stig Munk-Nielsen and Asger Bj{\o}rn J{\o}rgensen},
  booktitle = {Proceedings of CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems},
  title     = {Thermal Performance of an Integrated Heat Spreader for GaN HEMT devices},
  year      = {2022},
  month     = aug,
  note      = {CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems, CIPS 2022 ; Conference date: 15-03-2022 Through 17-03-2022},
  publisher = {VDE Verlag GMBH},
  day       = {19},
  isbn      = {978-3-8007-5757-2},
  language  = {English},
}

@Article{rui20222shortcircuit,
  author    = {Rui Wang and Asger Bj{\o}rn J{\o}rgensen and Hongbo Zhao and Stig Munk-Nielsen},
  journal   = {IEEE Transactions on Power Electronics},
  title     = {Short-Circuit Characteristic of Single Gate Driven SiC MOSFET Stack and its Improvement With Strong Anti-Short Circuit Fault Capabilities},
  year      = {2022},
  issn      = {0885-8993},
  month     = nov,
  number    = {11},
  pages     = {13577--13586},
  volume    = {37},
  day       = {1},
  doi       = {10.1109/TPEL.2022.3182777},
  language  = {English},
  publisher = {IEEE},
}

@InProceedings{Faheem2022ClassPN,
  author    = {Faheem Ahmad and Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen},
  booktitle = {2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)},
  title     = {Four-switch Class-PN Power Amplifier for High Power Handling Capability in Wireless Power Transfer},
  year      = {2022},
  month     = jul,
  pages     = {968-972},
  publisher = {IEEE},
  day       = {1},
  language  = {English},
}

@InProceedings{Masaki2022digitaldesign10kv,
  author    = {Masaki Takahashi and Thore Stig Aunsborg and Christian Uhrenfeldt and Stig Munk-Nielsen and Asger Bj{\o}rn J{\o}rgensen},
  booktitle = {2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)},
  title     = {Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities},
  year      = {2022},
  month     = aug,
  publisher = {IEEE},
  day       = {24},
  doi       = {10.1109/IWIPP50752.2022.9894237},
  language  = {English},
}

@InProceedings{Rui2022activedelaycontrol,
  author    = {Rui Wang and Asger Bj{\o}rn J{\o}rgensen and Hongbo Zhao and Stig Munk-Nielsen},
  booktitle = {2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)},
  title     = {Design and analysis of a voltage clamping active delay control method for series connected SiC MOSFETs},
  year      = {2022},
  month     = sep,
  publisher = {IEEE},
  day       = {17},
  language  = {English},
}

@InProceedings{Janus2022ClassEPushPull,
  author    = {Janus Dybdahl Meinert and Benjamin Futtrup Kj{\ae}rsgaard and Thore Stig Aunsborg and Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen and Sune Bro Duun},
  booktitle = {2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)},
  title     = {Class-E Push-Pull Resonance Converter with Load Variation Robustness for Industrial Induction Heating},
  year      = {2022},
  month     = sep,
  publisher = {IEEE},
  language  = {English},
}

@InProceedings{Pawel2022automatedgateimpedance,
  author    = {Pawel Piotr Kubulus and Szymon Michal Beczkowski and Stig Munk-Nielsen and Asger Bj{\o}rn J{\o}rgensen},
  booktitle = {2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)},
  title     = {Automated gate impedance network design for SiC MOSFETs using SPICE solver interfaced with MATLAB environment},
  year      = {2022},
  month     = sep,
  publisher = {IEEE},
  language  = {English},
}

@InProceedings{Pawel2022ltspicematlabinterface,
  author    = {Pawel Piotr Kubulus and Asger Bj{\o}rn J{\o}rgensen and Szymon Michal Beczkowski and Stig Munk-Nielsen},
  booktitle = {2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)},
  title     = {An LTSpice - MATLAB Interface for Mitigating Convergence Problems in Circuit Optimization with SPICE},
  year      = {2022},
  month     = aug,
  publisher = {IEEE},
  day       = {24},
  doi       = {10.1109/IWIPP50752.2022.9894135},
  language  = {English},
}

@Article{Rui202Adaptiveimpedanceselfpoweredgatedriver,
  author  = {Rui Wang and Asger Bj{\o}rn J{\o}rgensen and Wentao Liu and Hongbo Zhao and Zhixing Yan and Stig Munk-Nielsen},
  journal = {IEEE Transactions on Industrial Electronics},
  title   = {Voltage Balancing of Series-Connected SiC mosfets With Adaptive-Impedance Self-Powered Gate Drivers},
  year    = {2023},
  number  = {11},
  pages   = {11401-11411},
  volume  = {70},
  doi     = {10.1109/TIE.2022.3231281},
}

@InProceedings{Faheem2023MultiCellClassPN,
  author    = {Faheem Ahmad and Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen},
  booktitle = {2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)},
  title     = {Multi-cell Operation of Class-PN at 6.78 MHz using GaN Devices for Industrial Dielectric Heating},
  year      = {2023},
  month     = aug,
  pages     = {120-125},
  publisher = {IEEE},
  day       = {22},
  doi       = {10.23919/ICPE2023-ECCEAsia54778.2023.10213456},
  language  = {English},
}

@Article{Faheem2023Resonantload,
  author    = {Faheem Ahmad and Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen},
  journal   = {IEEE Transactions on Industry Applications},
  title     = {Modeling and Operation of Series-Parallel Resonant Load in Industrial RF Dielectric Heating Application},
  year      = {2023},
  month     = jul,
  number    = {4},
  pages     = {4418-4428},
  volume    = {59},
  day       = {1},
  doi       = {10.1109/TIA.2023.3257838},
  language  = {English},
  publisher = {IEEE},
}

@InProceedings{Benjamin2023Lossimbalance,
  author    = {Benjamin Futtrup Kj{\ae}rsgaard and Thore Stig Aunsborg and Jannick Kj{\ae}r J{\o}rgensen and Dipen Narendra Dalal and Masaki Takahashi and Asger Bj{\o}rn J{\o}rgensen and Hongbo Zhao and Stig Munk-Nielsen and Bj{\o}rn Rannestad},
  booktitle = {2023 IEEE 6th International Electrical and Energy Conference (CIEEC)},
  title     = {Loss Imbalance in SiC Half-Bridge Power Module},
  year      = {2023},
  month     = may,
  pages     = {3247-3253},
  publisher = {IEEE},
  day       = {12},
  doi       = {10.1109/CIEEC58067.2023.10165973},
}

@InProceedings{Janus2023Embeddedcurrentsensor,
  author    = {Janus Dybdahl Meinert and Szymon Michal Beczkowski and Pawel Piotr Kubulus and Stig Munk-Nielsen and Asger Bj{\o}rn J{\o}rgensen},
  booktitle = {VDE},
  title     = {Embedded Current Sensor for SiC Die Current Measurement},
  year      = {2023},
  month     = may,
  note      = {International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2023},
  pages     = {1278-1285},
  publisher = {VDE Verlag GMBH},
  day       = {9},
  doi       = {10.30420/566091177},
}

@InProceedings{Thore2023ClassEPushpull,
  author    = {Thore Stig Aunsborg and Beno{\^i}t Bidoggia and Sune Bro Duun and Benjamin Futtrup Kj{\ae}rsgaard and Janus Dybdahl Meinert and Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen},
  booktitle = {APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition},
  title     = {Demonstration of a Class E push-pull resonant inverter for MHz induction heating},
  year      = {2023},
  month     = mar,
  pages     = {705-709},
  day       = {19},
  doi       = {10.1109/APEC43580.2023.10131354},
}

@InProceedings{Masaki2023Heatcyclefailurepoint,
  author    = {Masaki Takahashi and Jannick Kj{\ae}r J{\o}rgensen and Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen and Christian Uhrenfeldt},
  booktitle = {APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition},
  title     = {Heat cycle failure point prediction by 3D thermal stress analysis for medium voltage power module},
  year      = {2023},
  month     = mar,
  pages     = {2668-2675},
  publisher = {IEEE},
  day       = {19},
  doi       = {10.1109/APEC43580.2023.10131157},
  language  = {English},
}

@InProceedings{Zhongchao2023Liquidgallium,
  author    = {Zhongchao Sun and Asger Bj{\o}rn J{\o}rgensen and Nick Baker and Szymon Beczkowski and Wendi Guo and Stig Munk-Nielsen and Francesco Iannuzzo},
  booktitle = {APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition},
  title     = {Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductors},
  year      = {2023},
  pages     = {1135-1140},
  doi       = {10.1109/APEC43580.2023.10131435},
}

@InProceedings{Rui2023auxiliarypowersupplystartup,
  author    = {Rui Wang and Asger Bj{\o}rn J{\o}rgensen and Wentao Liu and Hongbo Zhao and Zhixing Yan and Dipen Narendra Dalal and Stig Munk-Nielsen},
  booktitle = {APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition},
  title     = {Auxiliary Power Supply Startup Evaluation and Improvement of the Input-series System with Small Submodule Capacitances},
  year      = {2023},
  month     = mar,
  pages     = {1323-1330},
  day       = {19},
  doi       = {10.1109/APEC43580.2023.10131586},
  language  = {English},
}

@InProceedings{abj2023ceramicmodule,
  author    = {Asger Bj{\o}rn J{\o}rgensen and Szymon Beczkowski and Benjamin Futtrup Kj{\ae}rsgaard and Stig Munk-Nielsen and Thore Stig Aunsborg and Hongbo Zhao},
  booktitle = {2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)},
  title     = {{Ceramic baseplate-less 10 kV SiC MOSFET power module with integrated liquid cooling}},
  year      = {2023},
  month     = {Sep.},
  pages     = {1-6},
}

@InProceedings{Faheem2023Phasedetection,
  author    = {Faheem Ahmad and Szymon Beczkowski and Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen},
  booktitle = {2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)},
  title     = {{A Phase Detection Method using Power Handling Capability in Resonant Converters}},
  year      = {2023},
  month     = {Sep.},
  pages     = {1-6},
}

@InProceedings{Benjamin2023Millerregionoscillation,
  author    = {Benjamin Futtrup Kj{\ae}rsgaard and Thore Aunsborg and Asger Bj{\o}rn J{\o}rgensen and Jannick J{\o}rgensen and Gao Liu and Stig Munk-Nielsen and Bj{\o}rn Rannestad and Hongbo Zhao},
  booktitle = {2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)},
  title     = {{Analysis of Miller Region Sustained Oscillations during Turn-on of High-Side 10kV SiC MOSFET}},
  year      = {2023},
  month     = {Sep.},
  pages     = {1-8},
}

@InProceedings{Masaki2023Temperature10kV,
  author    = {Masaki Takahashi and Szymon Beczkowski and Asger Bj{\o}rn J{\o}rgensen and Jannick Kj{\ae}r J{\o}rgensen and Stig Munk-Nielsen and Zhongchao Sun},
  booktitle = {2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)},
  title     = {{Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area}},
  year      = {2023},
  month     = {Sep.},
  pages     = {1-8},
}

@InProceedings{Zhongchao2023GaNcycling,
  author    = {Zhongchao Sun and Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen and Masaki Takahashi},
  booktitle = {2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)},
  title     = {{Thermal cycling characterization of integrated GaN power module}},
  year      = {2023},
  month     = {Sep.},
  pages     = {1-7},
}

@INPROCEEDINGS{Pawel2023inductancecnn,
  author={Kubulus, Pawel Piotr and Michal Beczkowski, Szymon and Munk-Nielsen, Stig and J{\o}rgensen, Asger Bj{\o}rn},
  booktitle={2023 IEEE Energy Conversion Congress and Exposition (ECCE)}, 
  title={Ultra-Fast Power Module Inductance Estimation using Convolutional Neural Networks}, 
  year={2023},
  volume={},
  number={},
  pages={5906-5909},
  doi={10.1109/ECCE53617.2023.10361953}
}

@INPROCEEDINGS{Mike2023zvs,
  author={Zach, Mike and Beczkowski, Szymon and J{\o}rgensen, Asger Bj{\o}rn and Munk-Nielsen, Stig},
  booktitle={2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)}, 
  title={Accurate Prediction of Incomplete Zero-Voltage Switching Dynamics and Losses}, 
  year={2023},
  volume={},
  number={},
  pages={1-6},
  doi={10.1109/WiPDA58524.2023.10382222}
}

@INPROCEEDINGS{Pawel2023dynamiccurrentsharing,
  author={Kubulus, Pawel Piotr and Dybdahl Meinert, Janus and Beczkowski, Szymon Michal and Munk-Nielsen, Stig and J{\o}rgensen, Asger Bj{\o}rn},
  booktitle={2023 IEEE Energy Conversion Congress and Exposition (ECCE)}, 
  title={Dynamic Current Sharing Optimization of Asymmetric SiC Power Module}, 
  year={2023},
  volume={},
  number={},
  pages={5923-5927},
  doi={10.1109/ECCE53617.2023.10361954}
}

@InProceedings{abj2024thermalceramicmodule,
  author    = {J{\o}rgensen, Asger Bj{\o}rn and Aunsborg, Thore Stig and Beczkowski, Szymon and Zhao, Hongbo},
  booktitle = {2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)},
  title     = {Thermal characterization of a ceramic baseplate-less 10 kV SiC MOSFET power module},
  year      = {2024},
  pages     = {4654-4659},
  doi       = {10.1109/IPEMC-ECCEAsia60879.2024.10568021},
}


@patent{PNCellpatent2023,
title = "Modular Power Converter",
author = "Stig Munk-Nielsen and Faheem Ahmad and Szymon Beczkowski and J{\o}rgensen, Asger Bj{\o}rn and Christian Uhrenfeldt",
year = "2023",
month = sep,
day = "28",
language = "English",
type = "Patent",
note = "WO/2023/179830; H02M 1/00 2006.1, H02M 7/48 2007.1,H05B 6/48 2006.1,H02M 7/49 2007.1,H02M 7/483 2007.1,H02M 3/335 2006.1",
}


@INPROCEEDINGS{nqi2024intermoduleoscillation,
  author={Qi, Nianzun and Yan, Zhixing and Liu, Gao and Nielsen, Morten Rahr and J{\o}rgensen, Jannick Kj{\ae}r and J{\o}rgensen, Asger Bj{\o}rn and Beczkowski, Szymon and Rannestad, Bj{\o}rn and Zhao, Hongbo and Munk-Nielsen, Stig},
  booktitle={2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)}, 
  title={Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules}, 
  year={2024},
  volume={},
  number={},
  pages={2485-2491},
  doi={10.1109/IPEMC-ECCEAsia60879.2024.10567759}
}

@INPROCEEDINGS{zhongchao2024digitaltwin,
  author={Sun, Zhongchao and Takahashi, Masaki and Guo, Wendi and Munk-Nielsen, Stig and J{\o}rgensen, Asger Bj{\o}rn},
  booktitle={2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)}, 
  title={Electro-Thermal Digital Twin for GaN eHEMT Power Modules Temperature Characterization during Power Cycling Tests}, 
  year={2024},
  volume={},
  number={},
  pages={4032-4037},
  doi={10.1109/IPEMC-ECCEAsia60879.2024.10567565}
}

@INPROCEEDINGS{zhixing2024gatedrivermillerclamp,
  author={Yan, Zhixing and Liu, Gao and Qi, Nianzun and Nielsen, Morten Rahr and J{\o}rgensen, Asger Bj{\o}rn and Meyer, Stefan and Rannestad, Bj{\o}rn and Bech, Michael M{\o}ller and Zhao, Hongbo and Munk-Nielsen, Stig},
  booktitle={2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)}, 
  title={Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules}, 
  year={2024},
  volume={},
  number={},
  pages={4649-4653},
  doi={10.1109/IPEMC-ECCEAsia60879.2024.10567193}
}

@INPROCEEDINGS{mike2024powersensor,
  author={Zach, Mike and Beczkowski, Szymon and J{\o}rgensen, Asger Bj{\o}rn and Munk-Nielsen, Stig},
  booktitle={2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)}, 
  title={Compensated Power Sensor for Semiconductor Switching Loss Measurement}, 
  year={2024},
  volume={},
  number={},
  pages={378-382},
  doi={10.1109/IPEMC-ECCEAsia60879.2024.10567238}
}


@ARTICLE{ruiwang2024startupanalysis,
  author={Wang, Rui and J{\o}rgensen, Asger Bj{\o}rn and Liu, Wentao and Zhao, Hongbo and Nee, Hans-Peter and Munk-Nielsen, Stig},
  journal={IEEE Transactions on Industrial Electronics}, 
  title={Startup Analysis and Design of Self-Powered Auxiliary Power Supply in Input-Series System With Small Submodule Capacitance}, 
  year={2024},
  volume={71},
  number={10},
  pages={12539-12548},
  doi={10.1109/TIE.2024.3357873}
}

@ARTICLE{faheem2024rfoverview,
  author={Ahmad, Faheem and Aunsborg, Thore Stig and J{\o}rgensen, Asger Bj{\o}rn and Munk-Nielsen, Stig},
  journal={IEEE Transactions on Industry Applications}, 
  title={From Vacuum Tubes to Modern Semiconductors: Opportunities for Industrial Heating Industry}, 
  year={2024},
  volume={},
  number={},
  pages={1-11},
  doi={10.1109/TIA.2024.3397639}
}

@Article{zhongchao2024sintervoids,
  author  = {Zhongchao Sun and Wendi Guo and Asger Bj{\o}rn J{\o}rgensen},
  journal = {Journal on Electronic Materials},
  title   = {A Computational Multiscale Modeling Method for Nanosilver-Sintered Joints with Stochastically Distributed Voids},
  year    = {2024},
  pages   = {2437-2454},
  volume  = {53},
  doi     = {10.1007/s11664-024-10960-x},
}

@Article{Janus2024chipsensor,
  author  = {Janus Dybdahl Meinert and Asger Bj{\o}rn J{\o}rgensen and Stig Munk-Nielsen and Szymon Michal Beczkowski and Michael AE Andersen},
  journal = {IEEE Journal of Emerging and Selected Topics in Power Electronics},
  title   = {Inductive Crosstalk Study of Embedded Current Sensor for SiC Die Current Measurement},
  year    = {2024},
  month   = jul,
  number  = {6},
  pages   = {5523-5533},
  volume  = {12},
}

@InProceedings{Janus2024ECCEeurope,
  author    = {Janus Dybdahl Meinert and Szymon Michal Beczkowski and Shaokang Luan and Michael AE Andersen and Stig Munk-Nielsen and Asger Bj{\o}rn J{\o}rgensen},
  booktitle = {2024 Energy Conversion Congress & Expo Europe (ECCE Europe)},
  title     = {A FEM Approach for Mitigating Magnetic Crosstalk for an Embedded Current Sensor},
  year      = {2024},
  pages     = {1-6},
}

@Article{Morten2024SiCApplications,
  author  = {Morten Rahr Nielsen and Shiyue Deng and Abdul Basit Mirza and Benjamin Futtrup Kj{\ae}rsgaard and Asger Bj{\o}rn J{\o}rgensen and Hongbo Zhao and Yang Li and Stig Munk-Nielsen and Fang Luo},
  journal = {IEEE Transactions on Power Electronics},
  title   = {High-Power Electronic Applications Enabled by Medium Voltage Silicon-Carbide Technology: An Overview},
  year    = {2024},
  month   = aug,
  number  = {1},
  pages   = {987-1011},
  volume  = {40},
}

@InProceedings{Nick2024Liquidmetalinterconnects,
  author    = {Nick Baker and Francesco Iannuzzo and Szymon Beczkowski and Kjeld Pedersen and Thore Stig Aunsborg and R Garcia and Asger Bj{\o}rn J{\o}rgensen and Subhadra Gupta and Andrew Lemmon},
  booktitle = {Scientific Books of Abstracts},
  title     = {Late News: Liquid Metal Interconnects for SiC MOSFETs},
  year      = {2024},
  pages     = {139-140},
  publisher = {Trans Tech Publications Ltd},
  volume    = {8},
}

@Article{Zhongchao2024thermalcyclingganmodule,
  author  = {Zhongchao Sun and Masaki Takahashi and Wendi Guo and Stig Munk-Nielsen and Asger Bj{\o}rn J{\o}rgensen},
  journal = {Microelectronics Reliability},
  title   = {Thermal cycling characterization of an integrated low-inductance GaN eHEMT power module},
  year    = {2024},
  pages   = {115482},
  volume  = {161},
}

@InProceedings{Gao2024Multichipdemonstration,
  author    = {Gao Liu and Zhixing Yan and Jannick Kj{\ae}r J{\o}rgensen and Morten Rahr Nielsen and Benjamin Futtrup Kj{\ae}rsgaard and Nianzun Qi and Thore Stig Aunsborg and Bj{\o}rn Rannestad and Asger Bj{\o}rn J{\o}rgensen and Hongbo Zhao and Michael M{\o}ller Bech and Stig Munk-Nielsen},
  booktitle = {2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)},
  title     = {Demonstration of 7.2 kV/200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module},
  year      = {2024},
  pages     = {1-5},
}

@Article{Yuan2025bottomcopperlayer,
  author  = {Gao, Yuan and Yin, Kai and Bak, Claus Leth and J{\o}rgensen, Asger Bj{\o}rn and Zhang, Zichen and Zhao, Hongbo and Munk-Nielsen, Stig and Uhrenfeldt, Christian and Aunsborg, Thore Stig},
  journal = {IEEE Transactions on Power Electronics},
  title   = {Impacts of the Bottom Copper Layer of Direct-Bond Copper Substrates on the Partial Discharge Performance in Power Modules},
  year    = {2025},
  month   = apr,
  number  = {4},
  pages   = {5999-6009},
  volume  = {40},
  doi     = {10.1109/TPEL.2024.3516534},
}

@Article{Pawel2025approximatespice,
  author  = {Kubulus, Pawel Piotr and Meinert, Janus Dybdahl and Beczkowski, Szymon and J{\o}rgensen, Asger Bj{\o}rn and Munk-Nielsen, Stig and Peftitsis, Dimosthenis},
  journal = {IEEE Transactions on Power Electronics},
  title   = {Approximate SPICE Modeling of SiC MOSFETs},
  year    = {2025},
  month   = apr,
  number  = {4},
  pages   = {5201-5211},
  volume  = {40},
  doi     = {10.1109/TPEL.2024.3510037},
}

@InProceedings{zach:hal-05095973,
  author       = {Z{\"a}ch, Mike and Beczkowski, Szymon and J{{\o}}rgensen, Asger Bj{{\o}}rn and Munk-Nielsen, Stig},
  booktitle    = {{The 26th European Conference on Power Electronics and Applications}},
  title        = {{Quantifying Incomplete Zero-Voltage Switching Losses Using Equivalent Hard-Switching Losses}},
  year         = {2025},
  address      = {Paris, France},
  month        = Mar,
  organization = {{GDR SEEDS France \& EPE Association}},
  doi          = {10.34746/epe2025-0116},
}

@InProceedings{NianzunAPEC2025,
  author    = {Qi, Nianzun and J{\o}rgensen, Jannick Kj{\ae}r and Liu, Gao and Yan, Zhixing and Nielsen, Morten Rahr and J{\o}rgensen, Asger Bj{\o}rn and Zhao, Hongbo and Munk-Nielsen, Stig},
  booktitle = {2025 IEEE Applied Power Electronics Conference and Exposition (APEC)},
  title     = {Turn-On Transient Modeling of 10 kV SiC MOSFET Half-Bridge Power Module in LTspice},
  year      = {2025},
  pages     = {357-362},
  doi       = {10.1109/APEC48143.2025.10977533},
  keywords  = {Semiconductor device modeling;MOSFET;Accuracy;Silicon carbide;Multichip modules;Switches;Medium voltage;Threshold voltage;Transient analysis;Hysteresis;Medium voltage;10 kV;SiC MOSFET;simulation model;LTspice},
}

@InProceedings{NianzunGuardCV,
  author    = {Qi, Nianzun and Liu, Gao and Yan, Zhixing and Luan, Shaokang and Kubulus, Pawel Piotr and Gao, Yuan and Meyer, Stefan and Zhao, Hongbo and J{\o}rgensen, Asger Bj{\o}rn and Munk-Nielsen, Stig},
  booktitle = {2025 IEEE Applied Power Electronics Conference and Exposition (APEC)},
  title     = {Guarding-Based C-V Characterization of 10 kV SiC MOSFET in Half-bridge Module Configuration},
  year      = {2025},
  pages     = {1034-1039},
  doi       = {10.1109/APEC48143.2025.10977418},
}

@InProceedings{nielsen:hal-05099127,
  author       = {Nielsen, Morten Rahr and Kjaer, Martin and Liu, Gao and Yan, Zhixing and J{{\o}}rgensen, Asger Bj{{\o}}rn and Zhao, Hongbo and Bech, Michael M{{\o}}ller and Munk-Nielsen, Stig},
  booktitle    = {{The 26th European Conference on Power Electronics and Applications}},
  title        = {{Performance Evaluation of Three-Phase, Two-Level Medium Voltage Power Stack Based on 10 kV SiC MOSFETs}},
  year         = {2025},
  address      = {Paris, France},
  month        = Mar,
  organization = {{GDR SEEDS France \& EPE Association}},
  doi          = {10.34746/epe2025-0134},
}

@InProceedings{kristensen:hal-05105916,
  author       = {Kristensen, Nikolaj Helmer and Deichgraeber, Jakob Iversen and Brackovic, Kerim and Beczkowski, Szymon and Munk-Nielsen, Stig and J{{\o}}rgensen, Asger Bj{{\o}}rn},
  booktitle    = {{The 26th European Conference on Power Electronics and Applications}},
  title        = {{Effects of Removing Bottom-side Copper in Baseplate-less Power Modules}},
  year         = {2025},
  address      = {Paris, France},
  month        = Mar,
  organization = {{GDR SEEDS France \& EPE Association}},
  doi          = {10.34746/epe2025-0190},
  keywords     = {Thermal management ; Parasitic elements ; SiC MOSFET ; Packaging},
}

@InProceedings{BakerLIMEPCIM,
  author    = {Baker, Nick and Beczkowski, Szymon and Iannuzzo, Francesco and Pedersen, Kjeld and Aunsborg, Thore and Jorgensen, Asger Bjorn and Lemmon, Andrew and Gupta, Su and Garcia, Ruben and Mshar, Alec},
  booktitle = {PCIM Conference 2025; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management},
  title     = {LIME: Liquid Metal Packaging for Power Semiconductors},
  year      = {2025},
  month     = may,
  pages     = {418-427},
  doi       = {10.30420/566541051},
}

@InProceedings{PawelPCIM2025,
  author    = {Kubulus, Pawel Piotr and Hansen, Henrik and Jorgensen, Asger Bjorn and Munk-Nielsen, Stig and Beczkowski, Szymon},
  booktitle = {PCIM Conference 2025; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management},
  title     = {GaN HEMT Gate Driver Circuit Utilizing Variable Capacitors},
  year      = {2025},
  month     = may,
  pages     = {3024-3029},
  doi       = {10.30420/566541404},
}

@InProceedings{Morten2025PEDG,
  author    = {Nielsen, Morten Rahr and Qi, Nianzun and Takahashi, Masaki and Liu, Gao and Yan, Zhixing and Zhao, Hongbo and J{\o}rgensen, Asger Bj{\o}rn and Munk-Nielsen, Stig},
  booktitle = {2025 IEEE 16th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)},
  title     = {Temperature-Dependent Characterization of Medium Voltage SiC MOSFETs for Solid State Transformer Applications},
  year      = {2025},
  pages     = {1-8},
  doi       = {10.1109/PEDG62294.2025.11060135},
}

@Article{TAKAHASHI2025Microelectronics,
  author  = {Masaki Takahashi and Zhongchao Sun and Akihiko Watanabe and Ichiro Omura and Stig Munk-Nielsen and Asger Bj{\o}rn J{\o}rgensen},
  journal = {Microelectronics Reliability},
  title   = {Thermo-mechanical analysis on 10 kV SiC-MOSFETs to improve the reliability of solder layers},
  year    = {2025},
  issn    = {0026-2714},
  pages   = {115826},
  volume  = {172},
  doi     = {https://doi.org/10.1016/j.microrel.2025.115826},
}

@Comment{jabref-meta: databaseType:bibtex;}